Semiconductor device and manufacturing method thereof

ABSTRACT

A method of realizing an active matrix display device having flexibility is provided. Further, a method for reducing parasitic capacitance between wirings formed on different layers is provided. After fixing a second substrate to a thin film device formed on a first substrate by bonding, the first substrate is removed, and wirings and the like are formed in the thin film device. The second substrate is removed next, and an active matrix display device having flexibility is formed. Further, parasitic capacitance can be reduced by forming wirings, after removing the first substrate, on the side in which a gate electrode over an active layer is not formed.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a method of manufacturing asemiconductor device, and in particular, it relates to a method ofmanufacturing a thin, flexible (having a flexible property)semiconductor device. Further, the present invention relates to a methodof reducing parasitic capacitance which is generated between wiringsformed on differing layers through insulating films. Note that the termsemiconductor device in this specification indicates general deviceswhich function by utilizing semiconductor properties, and that inparticular, the present invention can be suitably applied to integratedcircuits using elements having SOI (silicon on insulator) structures inwhich a semiconductor layer is formed on an insulator, to active matrixliquid crystal display devices structured using thin film transistors(TFTs), to active matrix EL display devices, and the like. The term thinfilm device indicates an electronic device containing a thin filmtransistor (TFT) structured using a semiconductor thin film, and atleast one element from amount elements such as wirings, conductivelayers, resistors, and capacitive elements in this specification.

[0003] 2. Description of the Related Art

[0004] Integrated circuits using elements having SOI structures in whichsemiconductor layers are formed on an insulator exist as one kind ofsemiconductor device. It is possible to have little parasiticcapacitance, and to have high operation speed, by forming semiconductorlayers on insulators.

[0005] One type of semiconductor device is an active matrix liquidcrystal display device. Structures in which a substrate on which thinfilm transistors (TFTs) are formed and used as switching elements ofpixels (TFT formation substrate), and a substrate on which an opposingelectrode is formed (opposing substrate) are joined, and liquid crystalsare injected in a gap between the substrates, is prevalent for activematrix liquid crystal display devices. The voltage applied to the liquidcrystals can be controlled for each single pixel by the TFTs formed on atransparent substrate such as glass, and therefore active matrix liquidcrystal display devices have clear images and are widely used in officeautomation equipment, televisions, and the like.

[0006] Further, active matrix EL display devices are known as one typeof semiconductor device. Active matrix EL display devices have astructure in which an EL material is sandwiched between two electrodes,and an electric current flows, thereby causing light to be emitted. Theelectric current flowing in the EL material can be controlled for eachsingle pixel by using a plurality of pixel transistors, and therefore animage is clear.

[0007] The level of integration for these types of semiconductor devicesis increased and becoming minute. Parasitic capacitance which isgenerated between wirings of a semiconductor device leads to electricsignal propagation delays, and this hinders high speed operation andaccurate electric signal propagation. There are two types of parasiticcapacitance, one which is generated between wirings formed on the samelayer, and one which is generated between wirings formed on differentlayers through an insulation film.

[0008] If the level of integration is increased, the distance betweenwirings formed on the same layer becomes smaller, thereby increasing theparasitic capacitance. Wirings may be moved to different layers in orderto reduce the parasitic capacitance between wirings formed on the samelayer. Namely, the integration level of wirings on the same layer isspread among several layers. Lowering the parasitic capacitance which isgenerated between wirings formed on different layers, through aninsulation film, contributes to an improvement in the overallintegration level of the semiconductor device.

[0009] There are methods such as making insulation films thicker andincreasing the distance between wirings, and using insulation filmshaving a low dielectric constant, in order to reduce the parasiticcapacitance generating between wirings formed on different layersthrough an insulation film. However, if the insulating film is madethicker, then not only does it become more difficult to form an openingportion in the insulation film in order to make a conductive connectionbetween wirings, but there are also cases in which problems such asconductive layers formed by sputtering, for example, breaking in theinside of the opening portion, or being unable to ensure a sufficientfilm thickness, with the resistance therefore becoming large. Further,insulation films having low dielectric constants have a likelihood todevelop problems relating to film quality, such as resistance to heatand permeability, and manufacturing problems such as dimensional changesdue to etching. For example, although dependent upon the etchingconditions, the hole diameter may become larger to approximately 1 μmfor a case in which a 1 μm thick acrylic is used, and there may bedamage in improving the overall level of integration of thesemiconductor device.

[0010] In addition, there is a method in which the formation order ofthe conductive layers used for forming the wirings is changed. For acase structuring integrated circuits, having two layers of wirings formaking the conductive connection between elements, by top gatetransistors, the following order of formation is normally used: activelayer; first insulation film (gate insulation film); first conductivelayer (gate electrode); second insulation film (first interlayerinsulating film); second conductive layer (first wiring); thirdinsulation film (second interlayer insulating film); and thirdconductive layer (second wiring).

[0011] If the structure is changed to the following: first conductivelayer (second wiring); first insulation film (lower portion insulationfilm); active layer; second insulation film (gate insulation film);second conductive layer (gate electrode); third insulation film (firstinterlayer insulating film); and third conductive layer (first wiring);then the distance between the first wiring and the second wiring becomeslarge, and the parasitic capacitance generating between the wirings canbe reduced.

[0012] The distance between the first wiring and the second wiringbecomes large in this case, and problems relating to openings and theconductive connection can be prevented through the active layer, forexample. However, even with the same second wiring, with the latter casea material able to withstand the film formation temperature of thesubsequently formed active layer and the thermal activation temperatureof injected impurities must be used, and the same materials cannotalways be used by the former and latter cases. For example, Al is oftenused as a wiring material having a low resistivity, but its resistanceto heat is low, and it cannot be used in the latter case.

[0013] Note that, within this specification, an electrode is a portionof a wiring, and the terms wiring and electrode are used separately forconvenience. However, the term wiring is always contained within theword electrode.

[0014] Semiconductor devices like those stated above are recently beingused in portable devices and the like, and there are demands to make theportable devices thinner, lighter, and more flexible (flexibleproperty). The major portion of the thickness of a semiconductor deviceis the thickness of its substrate, and the substrate may be made thinnerin order to make the portable device thinner and lighter. However, ifthe substrate is made thinner, then manufacturing becomes difficult dueto trouble in photolithography processes caused by warping of thesubstrate during manufacture, and substrate breakage more easilyoccurring during transportation of the substrate. A light, flexibledisplay device can be manufactured, provided that a semiconductor devicecan be manufactured on a transparent plastic substrate or the like, butthis has not yet been accomplished due to problems such as the heatresistance of plastic substrates.

[0015] Further, high speed operation of electric circuits and accuratepropagation of electric signals can be performed for reducing theparasitic capacitance which is generated between wirings formed ondifferent layers through an insulation film, thereby being able to usewiring materials having a low thermal resistance, such as Al, which havenot been able to be used.

SUMMARY OF THE INVENTION

[0016] The inventors of the present invention considered a method ofmanufacturing a thin film device on a substrate possessing sufficientresistance to heat and strength during manufacturing, and then removingthe substrate. First, a thin film device is formed on a first substrate,and then a second substrate is bonded. In this state, the thin filmdevice exists between the first substrate and the second substrate. Thefirst substrate is then removed, leaving the thin film device retainedon the second substrate. An opening portion for reaching the thin filmdevice retained on the second substrate is formed, and necessaryprocessing such as forming a conductive layer so as to contact the thinfilm device through the opening portion, is performed, and the secondsubstrate is also removed.

[0017] In addition, in the present invention, the first substrate andthe second substrate are bonded by coating an adhesive in a portion ofregions in which the thin film device is not formed. Alternatively, anadhesive is applied to a portion of the regions in which the thin filmdevice is not formed, and other portions are temporarily restrainedusing a material such as viscous adhesive material. The second substratecan thus easily be removed by cutting the bonded portions.

[0018] The thin film device is always retained on one of the substratesif the above method of manufacture is used, but both substrates arepeeled off in the end, so the first substrate and the second substratemay be thick, and substrates having sufficient strength can be used. Inaddition, little substrate warping and substrate breakage develops,resulting in that the manufacture is easy.

[0019] Flaws to the back surface of the substrate during substratetransportation in display devices such as active matrix liquid crystaldisplay devices and active matrix EL display devices are a cause of adrop in display product quality, and this becomes a problem. Thesubstrates used for support during manufacture are removed if the abovemethod of manufacture is used, and therefore this problem is alsoresolved.

[0020] In addition, output electrodes can be formed in both the obverseand reverse sides of the thin film device if the above method ofmanufacture is used. If these are overlapped, then they can be appliedto a three dimensional package and the like.

[0021] Further, there is also another invention in which a second wiringis formed in the side opposite to a first wiring with respect to anactive layer, after forming: an active layer, a first insulation film(gate insulation film); a first conductive layer (gate electrode); asecond insulation film (first interlayer insulating film); and a secondconductive layer (first wiring), in order. Namely, a structure to berealized in which: a first conductive layer (second wiring); a firstinsulation film (lower portion insulation film); an active layer; asecond insulation film (gate insulation film); a second conductive layer(gate electrode); a third insulation film (first interlayer insulatingfilm); and a third conductive layer (first wiring) are formed. Notethat, in this specification, the term active layer indicates a layercomposed of a semiconductor film containing a channel region, a sourceregion, and a drain region.

[0022] Parasitic capacitance generated between the first wiring and thesecond wiring can be reduced by the above structure, and the wirings areformed after forming the active layer. A material having a lowresistance to heat can therefore be used.

[0023] Two substrates are used in the present invention in order torealize this type of structure. A thin film device is formed on thefirst substrate, and the second substrate is bonded to the surface onwhich the thin film device is formed. The first substrate is removedusing a method such as mechanical grinding or chemical grinding, withthe thin film device supported on the second substrate. The back surfaceof the thin film device is exposed when the first substrate is removed,and therefore wirings are formed. Wirings can therefore be formed on thetop and bottom sides of the active layer. Cases in which transistors areformed on the first substrate, cases in which bottom gate transistorsare formed, and cases in which top gate transistors are formed can besimilarly structured. Note that the term bottom gate thin filmtransistor indicates a thin film transistor in which an active layer isformed in a layer between a gate electrode and a wiring, as shown inFIG. 27, in this specification.

[0024] Furthermore, by forming a top gate transistor on the firstsubstrate, and then forming wirings only on the bottom side of theactive layer, a transistor which becomes a bottom gate structure can bestructured after removing the first substrate, provided that themanufacturing method of the present invention. In this case, parasiticcapacitance between a first wiring formed on the bottom side of theactive layer and a gate wiring can be reduced. In addition, impuritiescan be injected in a self-aligning manner using a gate electrode thoughit was not possible with a conventional bottom gate structure.

[0025] In accordance with one aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0026] forming a thin film device on a first substrate;

[0027] bonding a second substrate to the surface of the first substrateon which the thin film device is formed;

[0028] removing the first substrate, leaving the thin film device on thesecond substrate;

[0029] forming an opening portion for reaching the thin film deviceretained on the second substrate; and

[0030] cutting the second substrate so that the bonding portion of thinfilm device and the second substrate is removed, and removing the secondsubstrate.

[0031] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0032] forming a thin film device on a first substrate;

[0033] bonding a second substrate to the surface of the first substrateon which the thin film device is formed;

[0034] removing the first substrate, leaving the thin film device on thesecond substrate;

[0035] forming an opening portion for reaching the thin film deviceretained on the second substrate, and forming at lest one conductivelayer contacting the thin film device through the opening portion; and

[0036] cutting the second substrate so that the bonding portion of thethin film device and the second substrate is removed, and removing thesecond substrate.

[0037] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0038] forming a thin film device on a first substrate;

[0039] coating regions in which the thin film device is formed, andregions in which the thin film device is not formed, separately by usingat least two types of adhesives, and bonding a second substrate to thesurface of the first substrate on which the thin film device is formed;

[0040] removing the first substrate, leaving the thin film device on thesecond substrate;

[0041] forming an opening portion for reaching the thin film deviceretained on the second substrate; and

[0042] cutting the second substrate so that the regions coated withadhesive are removed.

[0043] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0044] coating regions in which the thin film device is formed, andregions in which the thin film device is not formed, separately by usingat least two types of adhesives, and bonding a second substrate to thethin film device formed on the first substrate;

[0045] removing the first substrate, leaving the thin film device on thesecond substrate;

[0046] forming an opening portion for reaching the thin film deviceretained on the second substrate, and forming at least one conductivelayer contacting the thin film device through the opening portion; and

[0047] cutting the second substrate so that the regions coated withadhesive are removed.

[0048] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0049] forming a first thin film device on one surface of a firstsubstrate;

[0050] partially bonding a thin film or a second thin film device to asecond substrate;

[0051] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0052] removing the first substrate, leaving the first thin film deviceon the second substrate;

[0053] forming an opening portion in the first thin film device retainedon the second substrate; and

[0054] cutting the second substrate so that the bonding portion of thethin film, or the second thin film device, and the second substrate isremoved, and removing only the second substrate, leaving the thin filmor the second thin film device.

[0055] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0056] forming a first thin film device on one surface of a firstsubstrate;

[0057] partially bonding a thin film or a second thin film device to asecond substrate;

[0058] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0059] removing the first substrate, leaving the thin film device on thesecond substrate;

[0060] forming at least one conductive layer on the first thin filmdevice retained on the second substrate; and

[0061] cutting the second substrate so that the bonding portion of thethin film, or the second thin film device, and the second substrate isremoved, and removing only the second substrate, leaving the thin filmor the second thin film device.

[0062] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0063] forming a first thin film device on one surface of a firstsubstrate;

[0064] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a thin film or asecond thin film device to a second substrate;

[0065] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0066] removing the first substrate, leaving the thin film device on thesecond substrate;

[0067] forming an opening portion in the first thin film device retainedon the second substrate; and

[0068] cutting the second substrate so that a portion of the thin film,or the second thin film device, and the second substrate is removed, andremoving only the second substrate, leaving the thin film or the secondthin film device.

[0069] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0070] forming a first thin film device on one surface of a firstsubstrate;

[0071] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a thin film or asecond thin film device to a second substrate;

[0072] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0073] removing the first substrate, leaving the first thin film deviceon the second substrate;

[0074] forming at least one conductive layer in the first thin filmdevice retained on the second substrate; and

[0075] cutting the second substrate so that a portion of the thin film,or the second thin film device, and the second substrate is removed, andremoving only the second substrate, leaving the thin film or the secondthin film device.

[0076] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0077] forming a first thin film device on one surface of a firstsubstrate;

[0078] partially bonding a thin film or a second thin film device to asecond substrate;

[0079] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate; and

[0080] cutting the second substrate so that the bonding portion of thethin film, or the second thin film device, and the second substrate isremoved, and removing only the second substrate, leaving the thin filmor the second thin film device.

[0081] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0082] forming a first thin film device on one surface of a firstsubstrate;

[0083] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a thin film or asecond thin film device to a second substrate;

[0084] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate; and

[0085] cutting the second substrate so that a portion of the thin film,or the second thin film device, and the second substrate is removed, andremoving only the second substrate, leaving the thin film or the secondthin film device.

[0086] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0087] forming a first thin film device on one surface of a firstsubstrate;

[0088] partially bonding a thin film or a second thin film device to asecond substrate;

[0089] introducing liquid crystals between the first thin film deviceformed on the first substrate and the thin film, or the second thin filmdevice, bonded to the second substrate; and

[0090] cutting the first substrate, the first thin film device, thesecond substrate, and the thin film or the second thin film device, sothat a portion of the first substrate, the first thin film device, thesecond substrate, and the thin film or the second thin film device isremoved, and removing the second substrate, leaving the thin film or thesecond thin film device.

[0091] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0092] forming a first thin film device on one surface of a firstsubstrate;

[0093] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a thin film or asecond thin film device to a second substrate;

[0094] introducing a liquid crystal between the first thin film deviceformed on the first substrate and the thin film, or the second thin filmdevice, bonded to the second substrate; and

[0095] cutting the first substrate, the first thin film device, thesecond substrate, and the thin film or the second thin film device, sothat a portion of the first substrate, the first thin film device, thesecond substrate, and the thin film or the second thin film device isremoved, and removing the second substrate, leaving the thin film or thesecond thin film device.

[0096] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0097] forming a thin film device on one face of a first substrate;

[0098] partially bonding a polarization film or a polarization plate toa second substrate;

[0099] bonding the polarization film or the polarization plate bonded tothe second substrate to the thin film device formed on the firstsubstrate;

[0100] removing the first substrate, leaving the thin film device on thesecond substrate;

[0101] forming an opening portion in the thin film device retained onthe second substrate; and

[0102] cutting the second substrate so that the bonding portion of thepolarization film, or the polarization plate, and the second substrateis removed, and removing only the second substrate, leaving thepolarization film or the polarization plate.

[0103] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0104] forming a thin film device on one face of a first substrate;

[0105] partially bonding a polarization film or a polarization plate toa second substrate;

[0106] bonding the polarization film or the polarization plate bonded tothe second substrate to the thin film device formed on the firstsubstrate;

[0107] removing the first substrate, leaving the thin film device on thesecond substrate;

[0108] forming at least one conductive layer on the thin film deviceretained on the second substrate; and

[0109] cutting the second substrate so that the bonding portion of thepolarization film, or the polarization plate, and the second substrateis removed, and removing only the second substrate, leaving thepolarization film or the polarization plate.

[0110] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0111] forming a thin film device on one face of a first substrate;

[0112] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a polarization filmor a polarization plate to a second substrate;

[0113] bonding the polarization film or the polarization plate bonded tothe second substrate to the thin film device formed on the firstsubstrate;

[0114] removing the first substrate, leaving the thin film device on thesecond substrate;

[0115] forming an opening portion in the thin film device retained onthe second substrate; and

[0116] cutting the second substrate so that a portion of thepolarization film, or the polarization plate, and the second substrateis removed, and removing only the second substrate, leaving thepolarization film or the polarization plate.

[0117] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0118] forming a thin film device on one face of a first substrate;

[0119] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a polarization filmor a polarization plate to a second substrate;

[0120] bonding the polarization film or the polarization plate bonded tothe second substrate to the thin film device formed on the firstsubstrate;

[0121] removing the first substrate, leaving the thin film device on thesecond substrate;

[0122] forming at least one conductive layer on the thin film deviceretained on the second substrate; and

[0123] cutting the second substrate so that a portion of thepolarization film, or the polarization plate, and the second substrateis removed, and removing only the second substrate, leaving thepolarization film or the polarization plate.

[0124] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0125] forming a thin film device on one surface of a first substrate;

[0126] forming an electrode on the thin film device;

[0127] partially bonding a second substrate to the thin film deviceformed on the first substrate, and;

[0128] removing the first substrate, leaving the thin film device on thesecond substrate;

[0129] forming an opening portion in the thin film device retained onthe second substrate;

[0130] cutting the second substrate so that the bonding portion of thethin film device and the second substrate is removed, and removing thesecond substrate; and

[0131] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and an electrode formed on thebottom of the thin film devices conductive.

[0132] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0133] forming a thin film device on one surface of a first substrate;

[0134] forming an electrode on the thin film device;

[0135] partially bonding a second substrate to the thin film deviceformed on the first substrate;

[0136] removing the first substrate, leaving the thin film device on thesecond substrate;

[0137] forming an opening portion in the thin film device retained onthe second substrate, and forming at least one conductive layer to forman electrode;

[0138] cutting the second substrate so that the bonding portion of thethin film device and the second substrate is removed, and removing thesecond substrate; and

[0139] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and bottom of the thin filmdevices conductive.

[0140] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0141] forming a thin film device on one surface of a first substrate;

[0142] forming an electrode on the thin film device;

[0143] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a second substrate tothe thin film device formed on the first substrate;

[0144] removing the first substrate, leaving the thin film device on thesecond substrate;

[0145] forming an opening portion in the thin film device retained onthe second substrate;

[0146] cutting the second substrate so that a portion of the thin filmdevice and the second substrate is removed, and removing the secondsubstrate; and

[0147] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and an electrode formed on thebottom of the thin film devices conductive.

[0148] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0149] forming a thin film device on one surface of a first substrate;

[0150] forming an electrode on the thin film device;

[0151] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a second substrate tothe thin film device formed on the first substrate;

[0152] removing the first substrate, leaving the thin film device on thesecond substrate;

[0153] forming an opening portion in the thin film device retained onthe second substrate, and forming at least one conductive layer, formingan electrode;

[0154] cutting the second substrate so that the bonding portion of thethin film device and the second substrate is removed, and removing thesecond substrate; and

[0155] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and bottom of the thin filmdevices conductive.

[0156] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0157] forming a first thin film device on one surface of a firstsubstrate;

[0158] forming an electrode on the first thin film device;

[0159] partially bonding a thin film or a second thin film device havingan opening portion to a second substrate; or forming an opening portionin the thin film or the second thin film device after partially bondingthe thin film or the second thin film device to the second substrate;

[0160] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0161] removing the first substrate, leaving the first thin film deviceon the second substrate;

[0162] forming an opening portion in the first thin film device retainedon the second substrate;

[0163] cutting the second substrate so that the bonding portion of thethin film, or the second thin film device, and the second substrate isremoved, and removing only the second substrate, leaving the thin filmor the second thin film device; and

[0164] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and bottom of the thin filmdevices conductive.

[0165] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0166] forming a first thin film device on one surface of a firstsubstrate;

[0167] forming an electrode on the first thin film device;

[0168] partially bonding a thin film, or a second thin film device,having an opening portion, to a second substrate; or forming an openingportion in the thin film or the second thin film device after partiallybonding the thin film or the second thin film device to the secondsubstrate;

[0169] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0170] removing the first substrate, leaving the first thin film deviceon the second substrate;

[0171] forming an opening portion in the first thin film device retainedon the second substrate, and forming at least one conductive layer toform an electrode;

[0172] cutting the second substrate so that the bonding portion of thethin film, or the second thin film device, and the second substrate isremoved, and removing only the second substrate, leaving the thin filmor the second thin film device; and

[0173] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and bottom of the thin filmdevices conductive.

[0174] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0175] forming a first thin film device on one surface of a firstsubstrate;

[0176] forming an electrode on the first thin film device;

[0177] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a thin film, or asecond thin film device, having an opening portion, to a secondsubstrate; or coating locations in which the thin film device exists,and locations in which the thin film device does not exist, separatelyby using at least two types of adhesives to form an opening portion inthe thin film or the second thin film device after bonding the thin filmor the second thin film device to the second substrate;

[0178] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0179] removing the first substrate, leaving the first thin film deviceon the second substrate;

[0180] forming an opening portion in the first thin film device retainedon the second substrate;

[0181] cutting the second substrate so that a portion of the thin film,or the second thin film device, and the second substrate is removed, andremoving only the second substrate, leaving the thin film or the secondthin film device; and

[0182] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and bottom of the thin filmdevices conductive.

[0183] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0184] forming a first thin film device on one surface of a firstsubstrate;

[0185] forming an electrode on the first thin film device;

[0186] coating locations in which the thin film device exists, andlocations in which the thin film device does not exist, separately byusing at least two types of adhesives, and bonding a thin film, or asecond thin film device, having an opening portion, to a secondsubstrate; or coating locations in which the thin film device exists,and locations in which the thin film device does not exist, separatelyby using at least two types of adhesives to form an opening portion inthe thin film or the second thin film device after bonding the thin filmor the second thin film device to the second substrate;

[0187] bonding the thin film or the second thin film device bonded tothe second substrate to the first thin film device formed on the firstsubstrate;

[0188] removing the first substrate, leaving the first thin film deviceon the second substrate;

[0189] forming an opening portion in the first thin film device retainedon the second substrate, and forming at least one conductive layer toform an electrode;

[0190] cutting the second substrate so that a portion of the thin film,or the second thin film device, and the second substrate is removed, andremoving only the second substrate, leaving the thin film or the secondthin film device; and

[0191] forming and overlapping a plurality of thin film devices from thethin film device obtained in accordance with the preceding steps, andmaking the electrodes formed on the top and bottom of the thin filmdevices conductive.

[0192] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0193] forming a thin film device on a first substrate;

[0194] bonding the surface of the first substrate on which the thin filmdevice is formed to a second substrate;

[0195] removing the first substrate; and

[0196] forming an opening portion in the thin film device retained onthe second substrate.

[0197] In accordance with another aspect of the present invention, themethod for manufacturing a semiconductor device comprises the steps of:

[0198] forming a thin film device on a first substrate;

[0199] bonding the surface of the first substrate on which the thin filmdevice is formed to a second substrate;

[0200] removing the first substrate; and

[0201] forming at least one conductive layer in the thin film deviceretained on the second substrate.

[0202] In accordance with another aspect of the present invention, thesemiconductor device comprises a semiconductor formed on an insulator asan active layer, wherein: at least one conductive layer is formed above,and below, the active layer using a material capable of withstanding atemperature of 550° C.

[0203] In accordance with another aspect of the present invention, thethin film transistor comprises a semiconductor formed on an insulator asan active layer, comprising:

[0204] a gate insulating film on the active layer;

[0205] a gate electrode on the gate insulating film;

[0206] performing impurity addition, using the gate electrode as a mask;and

[0207] a wiring on the side opposite the gate electrode, with respect tothe active layer, using a material having a resistance to heat equal toor less than 550° C.

[0208] In accordance with another aspect of the present invention, thesemiconductor device comprises a semiconductor formed on an insulator asan active layer, comprising:

[0209] a pair of polarization films;

[0210] a pixel electrode;

[0211] a thin film transistor composed of: an active layer; a gateinsulating film contacting the active layer; and a gate electrodecontacting the gate insulating film;

[0212] a wiring connected to the active layer from the gate electrodeside;

[0213] an opposing electrode;

[0214] liquid crystals between a pixel electrode formed between the pairof polarization films, and the opposing electrode;

[0215] a sealant; and

[0216] an orientation film.

[0217] In accordance with another aspect of the present invention, thesemiconductor device comprises a semiconductor formed on an insulator asan active layer, comprising:

[0218] a pair of polarization films;

[0219] a thin film transistor composed of: an active layer contacting afirst insulating film; a gate insulating film contacting the activelayer; and a gate electrode contacting the gate insulating film;

[0220] a third insulating film contacting the gate electrode;

[0221] a passivation film contacting the third insulating film;

[0222] a wiring electrically connected to each thin film transistorthrough an opening portion formed in the third insulating film and inthe gate insulating film;

[0223] a pixel electrode formed in the surface opposite that in whichthe gate electrode of the active layer is formed;

[0224] an orientation film formed contacting the pixel electrode;

[0225] an opposing electrode formed in one polarization film of the pairof polarizing films;

[0226] liquid crystals between the pixel electrode, formed between thepair of polarizing films, and the opposing electrode; and

[0227] a sealant formed between the first insulating film and the pairof polarizing films.

BRIEF DESCRIPTION OF THE DRAWINGS

[0228] In the accompanying drawings:

[0229]FIGS. 1A to 1D are diagrams showing an embodiment mode of thepresent invention;

[0230]FIGS. 2A and 2B are diagrams showing an embodiment mode of thepresent invention;

[0231]FIGS. 3A to 3C are diagrams showing an embodiment mode of thepresent invention;

[0232]FIGS. 4A and 4B are diagrams showing an embodiment mode of thepresent invention;

[0233]FIGS. 5A and 5B are diagrams showing an embodiment mode of thepresent invention;

[0234]FIG. 6 is a diagram showing an embodiment mode of the presentinvention;

[0235]FIGS. 7A to 7F are diagrams showing an example of an embodiment ofthe present invention;

[0236]FIGS. 8A to 8D are diagrams showing an example of an embodiment ofthe present invention;

[0237]FIGS. 9A to 9D are diagrams showing an example of an embodiment ofthe present invention;

[0238]FIGS. 10A to 10C are diagrams showing an example of an embodimentof the present invention;

[0239]FIGS. 11A and 11B are diagrams showing an example of an embodimentof the present invention;

[0240]FIG. 12 is a diagram showing an example of an embodiment of thepresent invention;

[0241]FIG. 13 is a diagram showing an example of an embodiment of thepresent invention;

[0242]FIGS. 14A to 14C are diagrams showing an example of an embodimentof the present invention;

[0243]FIGS. 15A and 15B are diagrams showing an example of an embodimentof the present invention;

[0244]FIG. 16 is a diagram showing an example of an embodiment of thepresent invention;

[0245]FIGS. 17A to 17E are diagrams showing an example of an embodimentof the present invention;

[0246]FIGS. 18A to 18D are diagrams showing an example of an embodimentof the present invention;

[0247]FIGS. 19A to 19D are diagrams showing an example of an embodimentof the present invention;

[0248]FIGS. 20A to 20C are diagrams showing an example of an embodimentof the present invention;

[0249]FIG. 21 is a diagram showing an example of an embodiment of thepresent invention;

[0250]FIG. 22 is a diagram showing an example of an embodiment of thepresent invention;

[0251]FIG. 23 is a diagram showing an example of an embodiment of thepresent invention;

[0252]FIGS. 24A to 24C are diagrams showing an active matrix EL displaydevice manufactured using the present invention;

[0253]FIG. 25 is a diagram showing an active matrix EL display devicemanufactured using the present invention;

[0254]FIG. 26 is a diagram showing an active matrix EL display devicemanufactured using the present invention;

[0255]FIG. 27 is a diagram showing an example of an embodiment of thepresent invention; and

[0256]FIGS. 28A to 28F are diagrams showing examples of electronicdevices.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0257] [Embodiment Mode 1]

[0258] A method of manufacturing an active matrix liquid crystal displaydevice using the present invention is explained using FIG. 1A to FIG.3C.

[0259] First, a thin film device (which becomes a thin film device 102)is manufactured on a TFT formation substrate 101 as a first substrate. Aleveling film 103 may be added, leveling a surface for bonding a secondsubstrate. (See FIG. 1A.)

[0260] A supporting material 104 is prepared as a second substrate, anda polarization film 107 is attached by an adhesive. Note that an exampleof bonding in which two types of adhesives are used separately is shownhere. An adhesive A 105 bonds the outside of the thin film device 102when joining the first substrate and the second substrate, as stated thebelow, and an adhesive B 106 is a viscous adhesive and temporarilyrestrains the polarization film during a period up until the supportingmaterial 104 is removed. (See FIG. 1B.)

[0261] A polarization film may also be joined to the leveling film 103over the TFT formation substrate 101, of course, and be bonded to thesupporting material 104 bonded.

[0262] In FIG. 1C, an adhesive is coated on the fringe of the levelingfilm 103 formed over the TFT formation substrate 101 through the thinfilm device 102, and on the fringe of the surface of the supportingmaterial 104 on which the polarization film 107 is attached, and bothsubstrates are bonded. The first substrate is then removed by a methodsuch as back grinding or CMP, thereby exposing the surface of the thinfilm device 102. (See FIG. 1D.) In practice, a film such as a nitridefilm may also be prepared as a stopper in the lowest layer of the thinfilm device 102, and wet etching performed at the end of grinding.

[0263] A pixel electrode 108 is formed next in the thin film device 102retained on the supporting material 104. (See FIG. 2A.) An opposingelectrode 110 is attached to the polarization film 112, and liquidcrystals 109 are enclosed using a sealant 111. (See FIG. 2B.) Note thatone more supporting material may be prepared to support the polarizationfilm 112 in case the polarization film flexes.

[0264] In FIG. 3A, the substrate is cut at locations for detaching theadhesive A 105 in the outside of the thin film device 102. Regionscoated by the adhesive A 105 are removed by cutting, thereby onlyleaving regions coated by the viscous adhesive as the adhesive B106 (seeFIG. 3B), and the supporting material 104 is removed. (See FIG. 3C.)

[0265] A semiconductor device can thus be given flexibility (flexibleproperty), made thinner, and made lighter weight by manufacturing in astate in which it is fixed to a substrate, and by lastly removing thesubstrate. Note that an example relating to an active matrix liquidcrystal display device is shown here, and therefore the polarizationfilm is joined to the surface after removal from the substrate.Depending upon the usage objective, a film for surface protection, afilm as a supporting material, and the like can freely combined andused.

[0266] [Embodiment Mode 2]

[0267] A manufacturing method of the present invention is explainedsimply regarding a semiconductor device using a thin film transistor(TFT). The explanation here is made by utilizing a cross sectionaldiagram of one thin film transistor and wirings, but it can also beapplied to an integrated circuit using a plurality of transistors, ofcourse.

[0268] An etching stopper 1102, which will be later utilized whenremoving a first substrate 1101, is formed on the first substrate 1101.A transistor is structured by a lower portion insulation film 1103, anactive layer 1104 composed of a semiconductor such as silicon, a gateinsulation film 1105, and a gate electrode 1106 formed on the etchingstopper 1102. A first interlayer insulating film 1107 is formed, anopening portion for reaching the active layer 1104 is formed, and afirst wiring 1108 is formed through the opening portion. A secondinterlayer insulation film 1109 is formed (See FIG. 4A.)

[0269] A second substrate 1110 is bonded to the surface of the side ofthe first substrate 1101 over which a thin film device is formed, thefirst substrate 1101 and the etching stopper 1102 are removed, and anopening portion for reaching the active layer 1104 is formed. (See FIG.4B.) It is not always necessary to form the etching stopper 1102, but afilm such as a nitride film may be prepared in the lowest layer of thetransistor and used as a stopper by performing wet etching last.

[0270] A second wiring 1111 contacting the active layer through theopening portion is formed, and an insulation film 1112 is formed. (SeeFIG. 5A.) The conductive connection is formed between the first wiring1108 and the second wiring 1111 through the active layer in this case,but a larger opening portion may also be formed in only a portion foralignment precision, and the two wirings may be connected directly.Whichever method is used, opening portions are formed from the top andthe bottom with the structure of the present invention, and therefore itis easy to form the conductive connection. Further, wirings are formedafter forming the active layer, and therefore wirings having low heatresistance can be used.

[0271] An active layer, a gate insulating film, a gate electrode, afirst interlayer insulating film, a first wiring, a second interlayerinsulating film, a second wiring, and the second wiring for aconventional structure are shown at the same time in FIG. 6 forcomparison. Note that first wirings 1151 and 1154, and second wirings1155 and 1157 are cross sections of wirings which are not electricallyconnected to the thin film transistor shown in the figures here.

[0272] If the structure of the present invention is not used, a secondwiring 1158 is in a location denoted by reference numeral 1156, thesecond wiring 1156 is close to the first wiring 1154, and theirparasitic capacitance also becomes large. Further, the second wiring1157 may be formed in the location denoted by reference numeral 1155, ormay be formed in the location denoted by reference numeral 1151 as afirst wiring. In this case, the distance to a first wiring 1152 becomesshort.

[0273] In other words, the distance between the first wirings and thesecond wirings is the thickness of the second interlayer insulating filmwith the conventional structure, and it becomes the combined thicknessof the lower portion insulation film and the first interlayer insulatingfilm with the manufacturing method of the present invention. Thecombined thickness of the lower portion insulation film and the firstinterlayer insulating film of course is larger than the thickness of thesecond interlayer insulating film.

[0274] The effective thickness of the insulation films between thewirings can thus be increased, and the parasitic capacitance which isgenerated between wirings formed in different layers can be reduced, byusing the manufacturing method of the present invention. Note that,although there are problems in the conductive connection through theinsulation films by simply making the insulation films thicker, as doneconventionally, there are no such problems with the method ofmanufacture of the present invention. Further, the structure in whichwirings are formed in portions below the active layer are the same aswith conventional structures, but the wirings are formed after formingthe active layer, and therefore wiring materials having low heatresistance can be used. Low resistance wirings which could not be useddue to their low thermal resistance can therefore be used.

[0275] [Embodiments]

[0276] [Embodiment 1]

[0277] An example of applying a method of manufacturing a semiconductordevice of the present invention to an active matrix liquid crystaldisplay device is shown here. Note that only one pixel portion of aliquid crystal display device is shown in the figures because locationsat which adhesives are used separately, sealant locations, locations forcutting substrates, and the like are explained. The present inventioncan be applied, of course, to devices such as a liquid crystal displaydevice having a plurality of pixels, and to a liquid crystal displaydevice formed integrated with a driver circuit.

[0278] A glass substrate or a quartz substrate can be used as a firstsubstrate 400 in FIG. 7A. In addition, substrates having an insulationfilm formed on their surfaces, such as a silicon substrate, a metallicsubstrate, or a stainless steel substrate, can also be used.

[0279] An etching stopper 401 is formed next for removal of the firstsubstrate 400. A material having a selectivity which is sufficientlylarge with respect to the first substrate is used for the etchingstopper 401. A quartz substrate is used as the first substrate 400, anda silicon nitride film having a thickness of 10 to 1000 nm (typicallybetween 100 and 500 nm) is formed on the etching stopper 401 in thisembodiment.

[0280] A first insulation film 402 is formed on the etching stopper 401from a 10 to 1000 nm thick (typically 300 to 500 nm thick) silicon oxidefilm. Further, a silicon oxynitride film may also be used.

[0281] Subsequently, a 10 to 100 nm thick amorphous semiconductor film(an amorphous silicon film 403 in this embodiment) is formed by a knownfilm formation method on the first insulation film 402. Note that, inaddition to the amorphous silicon film, an amorphous compoundsemiconductor film such as amorphous silicon germanium film can also beused as the amorphous semiconductor film.

[0282] A semiconductor film containing a crystalline structure (acrystalline silicon film 404 in this embodiment) is then formed inaccordance with the technique recorded in Japanese Patent ApplicationLaid-open No. 7-130652 (U.S. Pat. No. 5,643,826). The technique recordedin the above patent is a means of crystallization using a catalystelement (one element, or a plurality of elements, selected from thegroup consisting of nickel, cobalt, germanium, tin, lead, palladium,iron, and copper, typically nickel) for promoting crystallization whencrystallizing an amorphous silicon film.

[0283] Specifically, heat treatment is performed in a state in which thecatalyst element is retained in the surface of the amorphous siliconfilm, thereby changing the amorphous silicon film to a crystallinesilicon film. The technique recorded in Embodiment 1 of the above patentis used in this embodiment of the present invention, but the techniquerecorded in Embodiment 2 of the patent may also be used. Note thatsingle crystalline silicon films and polycrystalline silicon films arecontained with the term crystalline silicon film, and that thecrystalline silicon film formed in this embodiment is a silicon filmhaving crystal boundaries.

[0284] Although depending upon the amount of hydrogen contained in theamorphous silicon film, it is preferable to perform dehydrogenationprocessing by heat treatment at 400 to 550° C. for several hours,thereby reducing the amount of contained hydrogen to 5 atomic % or less,and then performing crystallization. Further, other method ofmanufacturing the amorphous silicon film, such as sputtering orevaporation, may also be used; however, it is preferable to sufficientlyreduce impurity elements such as oxygen and nitrogen contained withinthe film.

[0285] A known technique may be used on the amorphous silicon film 403to form the crystalline silicon film (polysilicon film orpolycrystalline silicon film) 404. Light emitted from a laser (hereafterreferred to as laser light) is irradiated to the amorphous silicon film403 in this embodiment to form the crystalline silicon film 404. (SeeFIG. 7C.) A pulse emission type or continuous emission type excimerlaser may be used as the laser, and a continuous emission argon lasermay also be used. Alternatively, the second harmonic, the thirdharmonic, or the fourth harmonic of an Nd:YAG laser or an Nd:YVO lasermay also be used. In addition, the beam shape of the laser light may bea linear shape (including long and thin shapes) or a rectangular shape.

[0286] Furthermore, light emitted from a lamp (hereafter referred to aslamp light) may also be irradiated as a substitute for the laser light(hereafter referred to as lamp annealing). Lamp light emitted from alamp such as a halogen lamp or an infrared lamp can be used as the lamplight.

[0287] A process of performing thermal processing (annealing) as aboveby laser light or lamp light is referred to as an optical annealingprocess. The optical annealing process is performed at a high processingtemperature for a short time, and therefore the thermal process can beperformed effectively and at high throughput for cases in which asubstrate having low resistance to heat, such as a glass substrate, isused. Of course, the aim is to perform annealing, and therefore furnaceannealing (thermal annealing) can also be performed by using an electricfurnace as a substitute.

[0288] Laser annealing is performed in this embodiment using light froma pulse emission excimer laser formed into a linear shape. The laserannealing conditions are as follows: XeCl gas is used as an excitationgas; the processing temperature is set to room temperature; the pulseemission frequency is set to 30 Hz; and the laser energy density is from250 to 500 mJ/cm² (typically between 350 and 400 mJ/cm²).

[0289] Along with the complete crystallization of any amorphous regionsremaining after thermal crystallization, laser annealing performed atthe above conditions has an effect of lowering faults or the like in thecrystalline regions already crystallized. This process can thereforealso be referred to as a process for improving the crystallinity of thesemiconductor film by optical annealing, and a process for promotingcrystallization of the semiconductor film. It is also possible to obtainthese types of effects by optimizing the lamp annealing conditions.

[0290] A protective film 405, used during subsequent impurity addition,is formed next on the crystalline silicon film 404. (See FIG. 7D.) Theprotective film 405 is formed using a silicon oxynitride film, or asilicon oxide film, having a thickness from 100 to 200 nm (preferablybetween 130 and 170 nm). The protective film 405 is formed so that thecrystalline silicon film 404 is not directly exposed to a plasma duringimpurity addition, and in order to make delicate temperature controlpossible.

[0291] Subsequently, an impurity element which imparts p-typeconductivity (hereafter referred to as a p-type impurity) is addedthrough the protective film 405. Typically a periodic table group 13element, usually boron or gallium, can be used as the p-type impurityelement. This process (also referred to as a channel doping process) isone for controlling the TFT threshold voltage. Note that boron is addedhere by ion doping in which a plasma is excited using diborane (B₂H₆)without separation of mass. Ion implantation, in which mass separationis performed, may of course also be used.

[0292] A p-type impurity region (a) 406 containing a p-type impurityelement (boron in this embodiment) at a concentration of 1×10¹⁵ to1×10¹⁸ atoms/cm³ (typically between 5×10¹⁶ and 5×10¹⁷ atoms/cm³) isformed by this process. (See FIG. 7D.)

[0293] Next, after removing the protective film 405, unnecessaryportions of the crystalline silicon film are removed, thereby forming anisland-shape semiconductor film (hereafter referred to as an activelayer) 407. (See FIG. 7E.)

[0294] A gate insulation film 408 is formed, covering the active layer407. (See FIG. 7F.) The gate insulation film 408 may be formed having athickness of 10 to 200 nm, preferably from 50 to 150 nm. A siliconoxynitride film is formed having a thickness of 80 nm by plasma CVDusing N₂O and SiH₄ as raw materials.

[0295] Although not shown in the figures, a two layer lamination film oftungsten nitride (WN) having a thickness of 50 nm and tantalum (Ta)having a thickness of 350 nm is used as a gate wiring 409. (See FIG.8A.) The gate wiring may also be formed by a single layer conductivefilm, but it is preferable to use a two layer or a three layerlamination film when necessary.

[0296] Note that an element selected from the group consisting oftantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium(Cr), and silicon (Si), or an alloy film of a combination of theabove-mentioned elements (typically an Mo-W alloy or an Mo-Ta alloy) canbe used as the gate wiring.

[0297] Next, an n-type impurity element (phosphorous in this embodiment)is added in a self aligning manner with the gate wiring 409 as a mask.(See FIG. 8B.) The addition process is regulated so that phosphorous isadded to an n-type impurity region (a) 410 thus formed at aconcentration (typically from 1×10¹⁶ to 5×10¹⁸ atoms/cm³, more typicallybetween 3×10¹⁷ and 3×10¹⁸ atoms/cm³) which is from 5 to 10 times higherthan the boron concentration added by the channel doping process.

[0298] A resist mask 411 is formed, an n-type impurity element(phosphorous in this embodiment) is added, and an n-type impurity region(b) 412 containing a high concentration of phosphorous is formed. (SeeFIG. 8C.) Ion doping using phosphine (PH₃) is performed here (ionimplantation may also be performed, of course), and the concentration ofphosphorous in this region is set from 1×10²⁰ to 1×10²¹ atoms/cm³(typically between 2×10²⁰ and 5×10²⁰ atoms/cm³).

[0299] Further, phosphorous and boron which have been added in theprevious process are already contained in regions in which the n-typeimpurity region (b) 412 is formed, but phosphorous is added at asufficiently high concentration here, and therefore one need notconsider the influence of phosphorous and boron already added by theprior steps.

[0300] After removing the resist mask 411, a third insulation film 414is formed. (See FIG. 8D.) An insulation film containing silicon,specifically a silicon nitride film, a silicon oxide film, a siliconoxynitride film, or a lamination film of a combination of these films,may be formed with a thickness of 600 nm to 1.5 μm as the thirdinsulation film 414. A 1 μm thick silicon oxynitride film (with anitrogen concentration from 25 to 50 atomic %) is formed in thisembodiment using plasma CVD with SiH₄, N₂O, and NH₃ as raw materialgasses.

[0301] A heat treatment process is performed next in order to activatethe n-type and p-type impurity elements added at their respectiveconcentration. (See FIG. 8D.) This process can be performed by furnaceannealing, laser annealing, or rapid thermal annealing (RTA). Theactivation process is performed here by furnace annealing. The heattreatment process is performed within a nitrogen atmosphere at 300 to650° C., preferably between 400 and 550° C. Heat treatment is performedhere for 4 hours at 550° C.

[0302] The catalyst element used in crystallizing the amorphous siliconfilm (nickel in this embodiment) moves in the direction shown by thearrow at this point in this embodiment, and is captured (gettered) inthe n-type impurity region (b) 412 containing a high concentration ofphosphorous and which is formed by the step shown in FIG. 8C. This is aphenomena caused by the gettering effect of metallic elements byphosphorous, and as a result, the concentration of the catalyst elementin a channel region 413 becomes less than or equal to 1×10¹⁷ atoms/cm³(preferably less than or equal to 1×10¹⁶ atoms/cm³).

[0303] Conversely, the catalyst element is segregated in a highconcentration in a region which becomes a gettering site for thecatalyst element (the n-type impurity region (b) 412 formed by the stepshown in FIG. 8C), and the catalyst element exists there at aconcentration greater than or equal to 5×10¹⁸ atoms/cm³ (typically from1×10¹⁹ to 5×20²⁰ atoms/cm³).

[0304] In addition, heat treatment is performed at a temperature of 300to 450° C. for 1 to 12 hours in an atmosphere containing between 3 and100% hydrogen, thereby performing a hydrogenation process on the activelayer. This process is one of terminating dangling bonds in thesemiconductor layer by hydrogen which is thermally excited. Plasmahydrogenation (using hydrogen which is excited by a plasma) may also beperformed as another means of hydrogenation.

[0305] An opening portion 415 for reaching a source region and a drainregion of the TFT (see FIG. 9A) and source and drain wirings 416 areformed. (See FIG. 9B.) Further, although not shown in the figures, inthis embodiment, the wirings are three layer structure lamination filmsin which a 100 nm Ti film, a 300 nm aluminum film containing Ti, and a150 nm Ti film are formed in succession by sputtering.

[0306] A silicon nitride film, a silicon oxide film, or a siliconoxynitride film is formed next at a thickness of 50 to 500 nm (typicallybetween 200 and 300 nm) as a passivation film 417. (See FIG. 9C.) Plasmaprocessing is performed earlier than film formation in this embodimentusing a gas containing hydrogen such as H₂, NH₃ and the like, and heattreatment processing is performed after the film formation. Hydrogenexcited by this preprocess is supplied throughout the third insulationfilm 414. By performing heat treatment in this state, the film qualityof the passivation film 417 is improved, and the amount of hydrogenadded to the third insulation film 414 diffuses to the lower side, andtherefore the activation layer can be effectively hydrogenated.

[0307] Further, additional hydrogenation processing may also beperformed after forming the passivation film 417. For example, heattreatment may be performed for 1 to 12 hours at 300 to 45020 C. in anatmosphere containing between 3 and 100% hydrogen. Alternatively, asimilar effect can also be obtained by using plasma hydrogenation.

[0308] A fourth insulation film 418 made from an organic resin is thenformed having a thickness of approximately 1 μm as a leveling film. (SeeFIG. 9C.) Materials such as polyimide, acrylic, polyamide, polyimideamide, and BCB (benzocyclobutene) can be used as the organic resin. Thefollowing can be given as advantages of using an organic resin film: thefilm formation method is simple; the dielectric constant is low, andtherefore the parasitic capacitance is low; and there is superiorlevelness. Note that organic resin films other than those stated above,such as organic SiO compounds, can also be used. A thermalpolymerization type polyimide is used here, and it is formed by firingat 300° C. after application to the substrate.

[0309] A second substrate 419 is prepared next. An adhesive 420 isapplied to regions in which the thin film device is not formed when thesecond substrate 419 is joined to the first substrate 400, and a viscousadhesive 421 is applied to other regions so that a polarization film 422does not move. (See FIG. 9D.)

[0310] A glass substrate, a quartz substrate, and in addition,substrates such as a silicon substrate, a metallic substrate, and astainless steel substrate can be used as the second substrate 419.Further, the adhesive 420 bonds portions which are later cut away(regions in which the thin film device is not formed), and therefore itis not necessary for the adhesive 420 to be transparent. One havingresistance to heat may be selected. For example, there are polyvinylalcohol (PVA) adhesives generally used in bonding polarization films. Anadhesive having resistance to heat and which is transparent iseffectively used as the viscous adhesive 421, and acrylics, urethanes,and silicon adhesives can be given as viscous adhesives.

[0311] The surface of the first substrate 400 on which the TFT isformed, and the surface of the second substrate 419 to which thepolarization film is attached, are bonded in FIG. 10A. A transparent,heat resistant adhesive, a polyvinyl alcohol (PVA) adhesive, forexample, may be used as the adhesive.

[0312] The first substrate 400 is then cut away using means such as backgrinding or CMP, with the thin film device retained on the secondsubstrate 419. (See FIG. 10B.) A quartz substrate is used as the firstsubstrate 400, and a nitride film is used as the etching stopper 401 inthis embodiment, and therefore wet etching using hydrofluoric acid isperformed as a final removal means. Note that portions of the firstsubstrate 400 may be left when patterning using wet etching, and thatthese portions can be used as liquid crystal display device spacers.Further, the etching stopper 401 made from a nitride film may also beremoved subsequently by dry etching in this embodiment.

[0313] An opening portion is formed next in the first insulation film402 in order to make the to a pixel electrode, and a pixel electrode 423is formed. (See FIG. 10B.) The pixel electrode 423 may be formed byusing a transparent conductive film for cases in which a transmissiontype liquid crystal display device is formed, and by using a metallicfilm for cases in which a reflection type liquid crystal display deviceis formed. A transmission type liquid crystal display device is formedhere, and therefore a 110 nm thick indium oxide and tin oxide (ITO) filmis formed by sputtering.

[0314] Further, there is a method of forming the conductive connectionby the source and drain wirings 416 of FIG. 9B when an opening portionfor reaching the etching stopper 401 is formed in portions other thanthe active layer when opening the opening portion 415 for reaching thesource and drain regions of the TFT in FIG. 9A. If this method is used,portions other than the active layer are made conductive, and thereforethe aperture ratio of the pixel drops, but the pixel electrode 423 canbe made level.

[0315] Next, although not shown in the figures, an orientation film isformed using a polyimide film, a rubbing process is performed, and theliquid crystal molecules are given a certain, fixed pre-tilt angle andoriented. An opposing electrode 425 is then formed on a polarizationfilm 426, and these are joined using a sealing material, spacers, andthe like (both not shown in the figures) in accordance with a known cellconstruction process. Liquid crystals 424 are then sealed using asealant 427. (See FIG. 10C.) Note that it is preferable to form ashielding film on the polarization film 422 if the incidence directionfor light is that of light 1. Further, it is preferable to form a filmwhich becomes a light shielding film above or below the first insulationfilm 402 for cases in which the light incidence direction is light 2.Known liquid crystal materials may be used for the liquid crystals. Notethat one more supporting material similar to the second substrate 419may also be prepared for cases in which the polarization film 426 warps.Color filters and shielding films may also be formed when necessary inthe opposing polarization film 426.

[0316] Next, as shown in FIG. 11A, portions bonded by the adhesive 420are cut. Only portions bonded by the viscous adhesive 421 remain, andtherefore the second substrate 419 is peeled off, and a thin, lightweight, flexible active matrix liquid crystal display device iscomplete. (See FIG. 11B.)

[0317] In addition, an example of a liquid crystal display device inwhich a driver circuit is integrated and manufactured together with theliquid crystal display device using the manufacturing method of thepresent invention is shown in FIG. 12. FIG. 12 is a diagram showing astate after a source signal line driver circuit 1302, a gate signal linedriver circuit 1303, and transistors structuring a pixel portion 1301are formed on a first substrate, after which a second substrate isbonded, the first substrate is removed, and liquid crystals areintroduced (liquid crystal introduced region 1306), as seen from theliquid crystal side.

[0318] The liquid crystal display device shown in FIG. 12 is structuredby the pixel portion 1301, the source signal line driver circuit 1302,and the gate signal line driver circuit 1303. The pixel portion 1301 isan n-channel TFT, and the driver circuits formed in the periphery arestructured by CMOS circuits as basic elements. The source signal linedriver circuit 1302 and the gate signal line driver circuit 1303 areconnected to an FPC (flexible printed circuit) 1305 by using aconnection wiring 1304, and signals from external driver circuits arereceived.

[0319] A cross sectional diagram of FIG. 12 cut along the line A-A′ isshown in FIG. 13. Liquid crystals 1403, surrounded by a polarizationfilm 1401, an opposing electrode 1402, and a sealant 1404, are below apixel electrode 1405 connected to a pixel TFT 1406. The liquid crystals1403 are also below the driver TFT 1407 in this case, but the liquidcrystals 1403 may also be arranged only under the pixel electrode 1405for cases when one wishes to reduce parasitic capacitance. Signals froman FPC 1409 bonded by a conductive material 1408 are input to the driverTFT 1407. The structure functions as a transmission type display deviceby forming a polarization film 1410 on the opposite side of thepolarization film 1401, with respect to the liquid crystals 1403.

[0320] [Embodiment 2]

[0321] An example of a three dimensional package in which thin filmdevices formed using the present invention are overlapped is explainedsimply in this embodiment using figures.

[0322] Up through the processes of FIG. 9C is similar to Embodiment 1,and therefore an explanation of those portions is omitted. FIG. 14A is astate nearly identical to FIG. 9A, but the source and drain wiring 416is extended, thereby forming an electrode 900. Note that two transistorsare shown for the explanation, and portions common to Embodiment 1 usethe same reference numerals as Embodiment 1.

[0323] An opening portion 901 is formed here, and left such that theconductive connection can be made with the electrode 900. (See FIG.14B.) The adhesive 420 and the viscous adhesive 421 are applied to thesecond substrate 419, but the polarization film is not necessary. (SeeFIG. 14C.) The polarization film is not necessary, but a thin plate,protection film, and the like can be used in order to maintain rigidity.In this case, an opening portion is formed in the thin plate orprotecting film in advance in a position corresponding to the openingportion 901. The surface of the first substrate 400 on which the thinfilm device is formed, and the second substrate 419, are bonded usingthe adhesive 420 and the viscous adhesive 421 in FIG. 15A.

[0324] Similar to Embodiment 1, the first substrate 400 and the etchingstopper 401 are removed. An opening portion is formed in the firstinsulation film 402, and an electrode 902 is formed. A passivation film903 and a fifth insulation film 904 are formed with covering theelectrode 902, and an opening portion 905 is formed so that theconductive connection to the electrode 902 can be made. The passivationfilm 903 may be formed using a silicon nitride film, a silicon oxidefilm, or a silicon oxynitride film at a thickness of 50 to 500 nm,(typically between 200 and 300 nm), similar to the passivation film 417of Embodiment 1. The fifth insulation film 904 is similar to the fourthinsulation film 418 of Embodiment 1, and it provides leveling as well asbeing a protective film. The state of FIG. 15B is thus reached byperforming the processes through here.

[0325] The second substrate 419 is then removed by the same method asthat of Embodiment 1. A plurality of the thin film devices formed byprocessing up through this point are manufactured, and conductiveconnections are made between electrodes by using a conductive paste 906.If the thin film devices are then overlapped and joined, a semiconductordevice packaged in three dimensions is complete. (See FIG. 16.) Largecapacity, small size, and light weight have been sought for memory inrecent years, and the utilization of techniques for three dimensionalpackaging are in the spotlight. Semiconductor devices that are packagedin three dimensions can easily be realized, without making the processsteps more complex, if the present invention is used. Note that thejoined thin film devices are shown in FIG. 16 with conductiveconnections made through the source and drain regions of the thin filmtransistors, but direct connections of wirings may also be made.

[0326] [Embodiment 3]

[0327] A semiconductor device using thin film transistors (TFTs) whichuse semiconductor thin films formed on an insulator in their activelayers is explained in this embodiment. Note that, although a crosssection of one thin film transistor portion and wirings is shown in thefigures in order to explain the positional relationships such as thosebetween wirings and an active layer, and between wirings and insulationfilms, the present invention can also be applied to an integratedcircuit having a plurality of thin film transistors.

[0328] A glass substrate or a quartz substrate can be used as a firstsubstrate 2401 in FIG. 17A. In addition, substrates having an insulationfilm formed on their surfaces, such as a silicon substrate, a metallicsubstrate, or a stainless steel substrate, can also be used.

[0329] An etching stopper 2402 is formed next for removal of the firstsubstrate 2401. A material having a selectivity which is sufficientlylarge with respect to the first substrate is used for the etchingstopper 2402. A quartz substrate is used as the first substrate 2401,and a nitride film having a thickness of 10 to 1000 nm (typicallybetween 100 and 500 nm) is formed as the etching stopper 2402 in thisembodiment.

[0330] A lower portion insulation film 2403 is formed on the etchingstopper 2402 from a 10 to 100 nm thick (typically 300 to 500 nm thick)silicon oxide film. Further, a silicon oxynitride film may also be used.

[0331] Subsequently, a 10 to 100 nm thick amorphous semiconductor film(an amorphous silicon film 2404 in this embodiment) is formed by a knownfilm formation method on the lower portion insulation film 2403. (SeeFIG. 17B.) Note that, in addition to the amorphous silicon film, anamorphous compound semiconductor film such as amorphous silicongermanium can also be used as the amorphous semiconductor film.

[0332] A semiconductor film containing a crystalline structure (acrystalline silicon film 2405 in this embodiment) is then formed inaccordance with the technique recorded in Japanese Patent ApplicationLaid-open No. 7-130652 (U.S. Pat. No. 5,643,826). The technique recordedin the above patent is a means of crystallization using a catalystelement (one element, or a plurality of elements, selected from thegroup consisting of nickel, cobalt, germanium, tin, lead, palladium,iron, and copper, typically nickel) for promoting crystallization whencrystallizing an amorphous silicon film.

[0333] Specifically, heat treatment is performed in a state in which thecatalyst element is retained in the surface of the amorphous siliconfilm, thereby changing the amorphous silicon film to a crystallinesilicon film. The technique recorded in Embodiment 1 of the above patentis used in this embodiment of the present invention, but the techniquerecorded in Embodiment 2 of the patent may also be used. Note thatsingle crystalline silicon films and polycrystalline silicon films arecontained with the term crystalline silicon film, and that thecrystalline silicon film formed in this embodiment is a silicon filmhaving crystal grain boundaries.

[0334] Although depending upon the amount of hydrogen contained in theamorphous silicon film, it is preferable to perform dehydrogenationprocessing by heat treatment at 400 to 550° C. for several hours,thereby reducing the amount of contained hydrogen to 5 atomic % or less,and then performing crystallization. Further, other method ofmanufacturing the amorphous silicon film, such as sputtering orevaporation, may also be used; however, it is preferable to sufficientlyreduce impurity elements such as oxygen and nitrogen contained withinthe film.

[0335] A known technique may be used on the amorphous silicon film 2404to form the crystalline silicon film (polysilicon film orpolycrystalline silicon film) 2405. Light emitted from a laser(hereafter referred to as laser light) is irradiated to the amorphoussilicon film 2404 in this embodiment, forming the crystalline siliconfilm 2405. (See FIG. 17C.) A pulse emission type or continuous emissiontype excimer laser may be used as the laser, and a continuous emissionargon laser may also be used. Alternatively, the second harmonic, thethird harmonic, or the fourth harmonic of an Nd:YAG laser or an Nd:YVOlaser may also be used. In addition, the beam shape of the laser lightmay be a linear shape (including long and thin shapes) or a rectangularshape.

[0336] Furthermore, light emitted from a lamp (hereafter referred to aslamp light) may also be irradiated as a substitute for laser light(hereafter referred to as lamp annealing). Lamp light emitted from alamp such as a halogen lamp or an infrared lamp can be used as the lamplight.

[0337] A process of performing thermal processing (annealing) as aboveby laser light or lamp light is referred to as an optical annealingprocess. The optical annealing process is performed at a high processingtemperature for a short time, and therefore the thermal process can beperformed effectively and at high throughput for cases in which asubstrate having low resistance to heat, such as a glass substrate, isused. Of course, the aim is to perform annealing, and therefore furnaceannealing (thermal annealing) can also be performed by using an electricfurnace as a substitute.

[0338] Laser annealing is performed in this embodiment using light froma pulse emission excimer laser formed into a linear shape. The laserannealing conditions are as follows: XeCl gas is used as an excitationgas; the processing temperature is set to room temperature; the pulseemission frequency is set to 30 Hz; and the laser energy density is from250 to 500 mJ/cm² (typically between 350 and 400 mJ/cm²).

[0339] Along with the complete crystallization of any amorphous regionsremaining after thermal crystallization, laser annealing performed atthe above conditions has an effect of lowering faults in the crystallineregions already crystallized. This process can therefore also bereferred to as a process for improving the crystallinity of thesemiconductor film by optical annealing, and a process for promotingcrystallization of the semiconductor film. It is also possible to obtainthese types of effects by optimizing the lamp annealing conditions.

[0340] A protective film 2406, used during subsequent impurity addition,is formed next on the crystalline silicon film 2405. (See FIG. 17D.) Theprotective film 2406 is formed using a silicon oxynitride film, or asilicon oxide film, having a thickness from 100 to 200 nm (preferablybetween 130 and 170 nm). The protective film 2406 is formed so that thecrystalline silicon film 2405 is not directly exposed to a plasma duringimpurity addition, and in order to make delicate temperature controlpossible.

[0341] Subsequently, an impurity element which imparts p-typeconductivity (hereafter referred to as a p-type impurity) is addedthrough the protective film 2406. Typically a periodic table group 13element, usually boron or gallium, can be used as the p-type impurityelement. This process (also referred to as a channel doping process) isone for controlling the TFT threshold voltage. Note that Boron is addedhere by ion doping in which a plasma is excited using diborane (B₂H₆)without separation of mass. Ion implantation, in which mass separationis performed, may of course also be used.

[0342] A p-type impurity region (a) 2407 containing a p-type impurityelement (boron in this embodiment) at a concentration of 1×10¹⁵ to1×10¹⁸ atoms/cm³ (typically between 5×10¹⁶ and 5×10¹⁷ atoms/cm³) isformed by this process. (See FIG. 17D.)

[0343] Next, after removing the protective film 2406, unnecessaryportions of the crystalline silicon film are removed to form anisland-shape semiconductor film (hereafter referred to as an activelayer) 2408. (See FIG. 17E.)

[0344] A gate insulation film 2409 is formed with covering the activelayer 2408. (See FIG. 18A.) The gate insulation film 2409 may be formedhaving a thickness of 10 to 200 nm, preferably from 50 to 150 nm. Asilicon oxynitride film is formed having a thickness of 80 nm by plasmaCVD using N₂O and SiH₄ as raw materials.

[0345] Although not shown in the figures, a two layer lamination film of50 nm of tungsten nitride (WN) film and 350 nm of tantalum (Ta) is usedas a gate electrode 2410. (See FIG. 18B.) The gate electrode may also beformed by a single layer conductive film, but it is preferable to use atwo layer or a three layer lamination film when necessary.

[0346] Note that an element selected from the group consisting oftantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium(Cr), and silicon (Si), or an alloy film of a combination of theabove-mentioned elements (typically an Mo—W alloy or an Mo—Ta alloy) canbe used as the gate electrode.

[0347] Next, an n-type impurity element (phosphorous in this embodiment)is added in a self aligning manner with the gate wiring 2410 as a mask.(See FIG. 18C.) The addition process is regulated so that phosphorous isadded to an n-type impurity region (a) 2411 thus formed at aconcentration (typically from 1×10¹⁶ to 5×10¹⁸ atoms/cm³, more typicallybetween 3×10¹⁷ and 3×10¹⁸ atoms/cm³) which is from 5 to 10 times higherthan the boron concentration added by the channel doping process.

[0348] A resist mask 2412 is formed, an n-type impurity element(phosphorous in this embodiment) is added, and an n-type impurity region(b) 2413 containing a high concentration of phosphorous is formed. (SeeFIG. 18D.) Ion doping using phosphine (PH₃) is performed here (ionimplantation may also be performed, of course), and the concentration ofphosphorous in this region is set from 1×10²⁰ to 1×10²¹ atoms/cm³(typically between 2×10²⁰ and 5×10²⁰ atoms/cm³).

[0349] Further, phosphorous and boron which have been added in theprevious process are already contained in regions in which the n-typeimpurity region (b) 2413 is formed, but phosphorous is added at asufficiently high concentration here, and therefore one need notconsider the influence of phosphorous and boron already added by theprior steps.

[0350] After removing the resist mask 2412, a first interlayerinsulating film 2414 is formed (See FIG. 19A.) An insulation filmcontaining silicon, specifically a silicon nitride film, a silicon oxidefilm, a silicon oxynitride film, or a lamination film of a combinationof these films, may be formed with a thickness of 600 nm to 1.5 μm asthe first interlayer insulating film 2414. A 1 μm thick siliconoxynitride film (with a nitrogen concentration from 25 to 50 atomic %)is formed in this embodiment using plasma CVD with SiH₄, N₂O, and NH₃ asraw material gasses.

[0351] A heat treatment process is performed next in order to activatethe n-type and p-type impurity elements added at their respectiveconcentrations. (See FIG. 19A.) This process can be performed by furnaceannealing, laser annealing, or rapid thermal annealing (RTA). Theactivation process is performed here by furnace annealing. The heattreatment process is performed within a nitrogen atmosphere at 300 to650° C., preferably between 400 and 550° C. Heat treatment is performedhere for 4 hours at 550° C.

[0352] The catalyst element used in crystallizing the amorphous siliconfilm (nickel in this embodiment) moves in the direction shown by thearrow at this point in this embodiment, and is captured (gettered) inthe n-type impurity region (b) 2413 containing a high concentration ofphosphorous and which is formed by the step shown in FIG. 18D. This is aphenomena caused by the gettering effect of metallic elements byphosphorous, and as a result, the concentration of the catalyst elementin a channel region 2415 becomes less than or equal to 1×10¹⁷ atoms/cm³(preferably less than or equal to 1×10¹⁶ atoms/cm³).

[0353] Conversely, the catalyst element is segregated in a highconcentration in a region which becomes a gettering site for thecatalyst element (the n-type impurity region (b) 2413 formed by the stepshown in FIG. 18D) , and the catalyst element exists there at aconcentration greater than or equal to 5×10¹⁸ atoms/cm³ (typically from1×10¹⁹ to 5×20²⁰ atoms/cm³).

[0354] In addition, heat treatment is performed at a temperature of 300to 450° C. for 1 to 12 hours in an atmosphere containing between 3 and100% hydrogen, thereby performing a hydrogenation process on the activelayer. This process is one of terminating dangling bonds in thesemiconductor layer by hydrogen which is thermally excited. Plasmahydrogenation (using hydrogen which is excited by a plasma) may also beperformed as another means of the hydrogenation.

[0355] An opening portion 2416 for reaching a source region and a drainregion of the TFT (see FIG. 19B), and first wirings 2417 are formed.(See FIG. 19C.) Further, although not shown in the figures, in thisembodiment, the first wirings are a three layer structure laminationfilms in which a 100 nm Ti film, a 300 nm aluminum film containing Ti,and a 150 nm Ti film are formed in succession by sputtering.

[0356] A silicon nitride film, a silicon oxide film, or a siliconoxynitride film is formed next at a thickness of 50 to 500 nm (typicallybetween 200 and 300 nm) as a passivation film 2418. (See FIG. 19D.)Plasma processing is performed in advance in this embodiment using a gascontaining hydrogen such as H₂, NH₃ and the like, and heat treatmentprocessing is performed after film formation. Hydrogen excited by thispreprocess is supplied throughout the first interlayer insulating film2414. By performing heat treatment in this state, the film quality ofthe passivation film 2418 is improved, and the amount of hydrogen addedto the first interlayer insulating film 2414 diffuses to the lower side,and therefore the activation layer can be effectively hydrogenated.

[0357] Further, additional hydrogenation processing may also beperformed after forming the passivation film 2418. For example, heattreatment may be performed for 1 to 12 hours at 300 to 450° C. in anatmosphere containing between 3 and 100% hydrogen. Alternatively, asimilar effect can also be obtained by using plasma hydrogenation.

[0358] A insulation film 2419 made from an organic resin is then formedhaving a thickness of approximately 1 μm as a leveling film. (See FIG.19D.) Materials such as polyimide, acrylic, polyamide, polyimide amide,and BCB (benzocyclobutene) can be used as the organic resin. Thefollowing can be given as advantages of using an organic resin film: thefilm formation method is simple; the dielectric constant is low, andtherefore the parasitic capacitance is low; and there is superiorlevelness. Note that organic resin films other than those stated above,such as organic SiO compounds, can also be used. A thermallypolymerization type polyimide is used here, and it is formed by firingat 300° C. after application to the substrate.

[0359] A second substrate 2420 is prepared next, and bonded to thesurface of the first substrate 2401 on which the thin film device isformed. A glass substrate, a quartz substrate, and in addition,substrates such as a silicon substrate, a metallic substrate, and astainless steel substrate can be used as the second substrate 2420 here.A quartz substrate is used as the second substrate 2420 in thisembodiment. Adhesives such as epoxies, cyanoacrylates, and lighthardening adhesives can be used as the adhesive here.

[0360] The first substrate 2401 is then cut away using means such asback grinding or CMP (chemical mechanical polishing), with the thin filmdevice retained on the second substrate 2420. (See FIG. 20B.) A quartzsubstrate is used as the first substrate 2401, and a nitride film isused as the etching stopper 2402 in this embodiment, and therefore wetetching using hydrofluoric acid is performed after grinding to asuitable thickness. Further, the nitride film etching stopper 2402 mayalso be removed subsequently by dry etching in this embodiment.

[0361] An opening portion 2421 is formed next in the lower portioninsulation film 2403 in order to connect to the active layer 2408 (seeFIG. 20B), and second wirings 2422 and an insulation film 2423 areformed. (See FIG. 20C.) Heat treatment of the active layer 2408 isalready complete, and therefore a wiring material having a lowresistance to heat can be used as the second wirings 2422. Aluminum maybe used, similar to the first wirings 2417, and indium tin oxide (ITO)may also be used for cases in which the thin film device is used as atransmission type liquid crystal display device, as shown in Embodiment4.

[0362] The thickness of the insulation film between the first wiring2417 and the second wiring 2422 can thus be made thicker, and parasiticcapacitance can be reduced, using the manufacturing of the presentinvention. There are no problems in forming conductive connectionsthrough the insulation film, and further, a wiring material having lowheat resistance can be used. This contributes to high speed circuitoperation of electric circuits and to accurate propagation of electricsignals.

[0363] [Embodiment 4]

[0364] A process of manufacturing an active matrix liquid crystaldisplay device from the semiconductor device manufactured by Embodiment3 is explained in this embodiment. As shown in FIG. 21, the secondwirings 2422 is formed with respect to the substrate in the state ofFIG. 20B. A transparent conductive film may be used as the secondwirings 2422 for cases of manufacturing a transmission type liquidcrystal display device, and a metallic film may be used if a reflectiontype liquid crystal display device is manufactured. An indium tin oxide(ITO) film is formed by sputtering to a thickness of 110 nm here becausea transmitting type liquid crystal display device is made.

[0365] An orientation film 801 is formed. A polyimide film is used asthe orientation film over this embodiment. Further, an opposingelectrode 804 and an orientation film 803 are formed in an opposingsubstrate 805. Note that color filters and light shielding films mayalso be formed over the opposing substrate when necessary.

[0366] A rubbing process is performed after forming the orientation film803, so as to orient liquid crystal molecules by giving them a certain,fixed, pre-tilt angle. The active matrix substrate on which the pixelportion and a driver circuit are formed (the semiconductor devicemanufactured in this embodiment 3) and the opposing substrate are thenjoined together through a sealing material, spacers (both not shown inthe figures), and the like, in accordance with a known cell constructiontechnique. Liquid crystals 802 are then injected between both of thesubstrates, and are completely sealed using a sealant (not shown in thefigures). Known liquid crystal materials may be used for the liquidcrystals. The active matrix liquid crystal display device shown in FIG.21 is thus complete.

[0367] The overall structure for a case in which a driver circuit isintegrated with this active matrix liquid crystal display device isshown in FIG. 22. Note that FIG. 23 is a cross sectional diagram of FIG.22 cut along the line A-A′. FIG. 22 is a diagram showing a state after asource signal line driver circuit 1902, a gate signal line drivercircuit 1903, and transistors structuring a pixel portion 1901 areformed on a first substrate, after which a second substrate is bonded,the first substrate is removed, and liquid crystals are introduced(liquid crystal introduced region 1906), as seen from the liquid crystalside.

[0368] The liquid crystal display device shown in FIG. 22 is structuredby the pixel portion 1901, the source signal line driver circuit 1902,and the gate signal line driver circuit 1903. The pixel portion 1901 isn-channel TFTs, and the driver circuits formed in the periphery arestructured by CMOS circuits as basic elements. The source signal linedriver circuit 1902 and the gate signal line driver circuit 1903 areconnected to an FPC (flexible printed circuit) 1905 by using aconnection wiring 1904, and signals from external driver circuits arereceived.

[0369] Liquid crystals 1002, surrounded by an opposing electrode 1001and a sealant 1003, are below a pixel electrode 1004 connected to apixel TFT 1005. The liquid crystals 1002 are also below a driver TFT1006 in this case, but the liquid crystals 1002 may also be arrangedonly under the pixel electrode 1004 for cases when one wishes to reduceparasitic capacitance. Signals from an FPC 1008 bonded by a conductivematerial 1007 are input to the driver TFT 1006.

[0370] [Embodiment 5]

[0371] An example of applying the manufacturing method of thesemiconductor device of the present invention to an active matrix typeEL (electro luminescence) display device will be described.

[0372] The manufacturing steps are same as that till shown in FIG. 10Bof Embodiment 1. However the polarized film 422 is not necessary. (FIG.24A.) A transparent conductive film having a large work coefficient isused as the pixel electrode 1200. A chemical compound of indium oxideand tin oxide or a chemical compound of indium oxide and zinc oxide canbe used as the transparent conductive film.

[0373] The fifth insulating film 1202 is then formed on the pixelelectrode 1200, (below the pixel electrode in the figure) and an openportion is formed in the fifth insulating film 1202 on the pixelelectrode 1200. An EL layer 1201 is formed on the pixel electrode 1200in the open portion. Known organic EL materials and known inorganicmaterials can be used for the EL layer 1201. Further, low molecularweight (monomer) materials and high molecular weight (polymer) materialsexist as organic EL materials, and either may be used.

[0374] A known application technique may be used as a method of formingthe EL layer 1201. Further, the structure of the EL layer may be alamination structure or a single layer structure, in which holeinjecting layers, hole transporting layers, light emitting layers,electron transporting layers, and electron injecting layers are freelycombined.

[0375] A cathode 1203 composed of a conducting film having lightshielding properties (typically a conductive film having aluminum,copper, or silver as its main constituent, or a lamination film of theseand another conductive film) is formed on the EL layer 1201 (below theEL layer in the figure). Furthermore, it is preferable to remove, asmuch as possible, moisture and oxygen existing in the interface betweenthe cathode 1203 and the EL layer 1201. It is therefore necessary toemploy a scheme such as forming the EL layer 1201 and the cathode 1203in succession within a vacuum, or one in which the EL layer 1201 isformed in a nitrogen or inert gas environment, and then the cathode 1203is formed without exposure to oxygen or moisture. It is possible toperform the above stated film formation in Embodiment 5 by using amulti-chamber method (cluster tool method) film formation apparatus.

[0376] An EL element composed of the pixel electrode 1200, the EL layer1201, and the cathode 1203 is thus formed. The EL element is enclosed bythe filler material 1204. (FIG. 24B).

[0377] A glass plate, a metallic plate (typically a stainless steelmaterial), a ceramic plate, an FRP (fiberglass reinforced plastics)plate, a PVF (polyvinyl fluoride) film, a mylar film, a polyester film,and an acrylic resin film can be used as the cover material 1205.Further, a sheet having a structure in which aluminum foil is sandwichedby a PVF film or a mylar film can also be used.

[0378] Note that, it is necessary for the cover material to betransparent for cases in which the irradiating direction of light fromthe EL elements is toward the cover material side. A transparentmaterial such as a glass plate, a plastic plate, a polyester film, or anacrylic film, is used in this case.

[0379] Further, an ultraviolet hardening resin or a thermally hardeningresin can be used as the filler material 1204. PVC (polyvinyl chloride),acrylic, polyimide, epoxy resin, silicon resin, PVB (polyvinyl butyral)and EVA (ethylene vinyl acetate) can be used. Deterioration of the ELelements can be suppressed if a drying agent (preferably barium oxide)is formed on the inside of the filler material 1204.

[0380] Furthermore, spacers may also be included within the fillermaterial 1204. It is possible to give the spacers themselves moistureabsorbency by forming the spacers from barium oxide. Further, whenforming spacers, it is also effective to form a resin film on thecathode 1203 as a buffer layer for relieving pressure from the spacers.

[0381] Lastly, the second substrate 419 is removed by cut a substratesame as Embodiment 1. Thin and light active matrix EL display device isthus manufactured. (FIG. 24C.)

[0382] [Embodiment 6]

[0383] An example of manufacturing an EL (electro luminescence) displaydevice using the present invention in this embodiment will be described.FIG. 25 is a diagram showing a state after a source signal line drivercircuit 2102, a gate signal line driver circuit 2103, and transistorsstructuring a pixel portion 2101 are formed on the first substrate and,after which the second substrate is bonded, the first substrate isremoved, and the EL layer is formed, as seen from the EL layer side.FIG. 26 is a cross-sectional diagram of FIG. 11 cut along the line A-A′.

[0384] In FIGS. 25 and 26, reference numeral 2201 denotes a substrate,reference numeral 2101 denotes a pixel portion, reference numeral 2102denotes a source signal line driver circuit, 2103 denotes a gate signalline driver circuit. Each of the driver circuits is connected to anexternal equipment via a connection wiring 2104 leading to an FPC(flexible printed circuit) 2105.

[0385] A first sealing material 2106, a cover material 2107, a fillermaterial 2208, and a second sealing material 2108 are formed at thispoint so as to surround the pixel portion 2101, the source signal linedriver circuit 2102, and the gate signal line driver circuit 2103.

[0386]FIG. 26 is a cross sectional diagram corresponding to FIG. 25 cutalong the line A-A′. A driver TFT 2202 (note that an n-channel TFT and ap-channel TFT are shown here) contained in the source signal line drivercircuit 2102 over the substrate 2201, and a pixel TFT 2203 (a TFT forcontrolling the electric current flowing in an EL element is shown here)contained in the pixel portion 2101 are formed.

[0387] A pixel electrode 2204 is formed so as to electrically beconnected to either a source region or a drain region of the pixel TFT2203. A transparent conductive film having a large work coefficient isused as the pixel electrode 2204. A chemical compound of indium oxideand tin oxide or a chemical compound of indium oxide and zinc oxide canbe used as the transparent conductive film.

[0388] An insulating film 2205 is then formed on the pixel electrode2204 (below the pixel electrode in the figure) and an open portion isformed in the insulating film 2205 over the pixel electrode 2204. An ELlayer 2206 is formed on the pixel electrode 2204 in the open portion.Known organic EL materials and known inorganic materials can be used forthe EL layer 2206. Further, low molecular weight (monomer) materials andhigh molecular weight (polymer) materials exist as organic EL materials,and either may be used.

[0389] A known application technique may be used as a method of formingthe EL layer 2206. Further, the structure of the EL layer may be alamination structure or a single layer structure, in which holeinjecting layers, hole transporting layers, light emitting layers,electron transporting layers, and electron injecting layers are freelycombined.

[0390] A cathode 2207 composed of a conducting film having lightshielding properties (typically a conductive film having aluminum,copper, or silver as its main constituent, or a lamination film of theseand another conducting film) is formed on the EL layer 2206.Furthermore, it is preferable to remove, as much as possible, moistureand oxygen existing in the interface between the cathode 2207 and the ELlayer 2206. It is possible to perform the above stated film formation inEmbodiment 6 by using a multi-chamber method (cluster tool method) filmformation apparatus.

[0391] An EL element composed of the pixel electrode 2204, the EL layer2206, and the cathode 2207 is thus formed. The EL element is surroundedby the cover material 2107 which is joined to the substrate 2201 by thefirst sealing material 2106 and the second sealing material 2108 and isenclosed by the filler material 2208.

[0392] A glass plate, a metallic plate (typically a stainless steelplate), a ceramic plate, an FRP (fiberglass reinforced plastics) plate,a PVF (polyvinyl fluoride) film, a mylar film, a polyester film, and anacrylic resin film can be used as the cover material 2107. Further, asheet having a structure in which aluminum foil is sandwiched by a PVFfilm or a mylar film can also be used.

[0393] Note that, it is necessary for the cover material to betransparent for cases in which the irradiating direction of light fromthe EL elements is toward the cover material side. A transparentmaterial such as a glass plate, a plastic plate, a polyester film, or anacrylic film, is used in this case.

[0394] Further, an ultraviolet hardening resin or a thermally hardeningresin can be used as the filler material 2208. PVC (polyvinyl chloride),acrylic, polyimide, epoxy resin, silicon resin, PVB (polyvinyl butyral)and EVA (ethylene vinyl acetate) can be used. Deterioration of the ELelements can be suppressed if a drying agent (preferably barium oxide)is formed on the inside of the filler material 2208.

[0395] Furthermore, spacers may also be included within the fillermaterial 2208. It is possible to give the spacers themselves moistureabsorbency by forming the spacers from barium oxide. Further, whenforming spacers, it is also effective to form a resin film on thecathode 2207 as a buffer layer for relieving pressure from the spacers.

[0396] The connection wiring 2104 is electrically connected to the FPC2105 through a conductive material 2209. The connection wiring 2104transmits signals sent to the pixel portion 2101, the source signal linedriver circuit 2102, and the gate signal line driver circuit 2103 to theFPC 2105, and the wiring is electrically connected to external equipmentby the FPC 2105.

[0397] Further, the second sealing material 2108 is formed so as tocover exposed portions of the first sealing material 2106 and a portionof the FPC 2105, resulting in a structure in which the EL elements arecompletely cutoff from the atmosphere. This becomes the EL displaydevice having the cross sectional structure of FIG. 26.

[0398] [Embodiment 7]

[0399] A method of forming a bottom gate thin film transistor using themanufacturing method of the present invention is explained simply inthis embodiment. A cross sectional diagram of one transistor portion isshown in FIG. 27, and the method of manufacture is basically the same asthat of Embodiment 3. Note that the term bottom gate thin filmtransistor indicates a thin film transistor having a shape in which anactive layer is formed in a layer between a gate electrode and a secondwiring (the gate electrode and the wiring are not formed on the sameside of the active layer), as shown in FIG. 27, in this specification.

[0400] An impurity is added to the active layer 2408 in a self aligningmanner with the gate electrode 2410 as a mask, similar to Embodiment 1,in FIG. 18C. The first wiring 2417 is not necessary, and therefore thepassivation film 2418 and the insulation film 2419 are formed on thegate electrode 2410, thereby performing leveling. The second substrate2420 is bonded next, the first substrate 2401 is removed, and the secondwiring 2422 (denoted as the second wiring in order to be compatible withEmbodiment 3, although the first wiring does not exist in thisembodiment) and the insulation film 2423 are formed.

[0401] A bottom gate transistor possessing a wiring and a gate electrodeon opposite sides of an active layer can thus be formed. Differing froma conventional bottom gate transistor, an impurity can be added in aself aligning manner.

[0402] [Embodiment 8]

[0403] The active matrix display device manufactured by employing thepresent invention may be used as a display portion of electricequipment. As such electric equipments, there are given a video camera,a digital camera, a projector, a projection TV, a goggle type display(head mount display), a navigation system, a sound reproduction device,a note type personal computer, a game device, a portable informationterminal (such as a mobile computer, a cell phone, a portable type gamedevice or an electronic book), an image playback device having arecording medium, and the like. Specific examples of such electricequipments are given in FIGS. 28A to 28F.

[0404]FIG. 28A shows a cell phone that is composed of a main body 3001,a voice output portion 3002, a voice input portion 3003, a displayportion 3004, operating switches 3005, and an antenna 3006. The activematrix display device of the present invention may be used in thedisplay portion 3004.

[0405]FIG. 28B shows a video camera that is composed of a main body3101, a display portion 3102, a sound input portion 3103, operationswitches 3104, a battery 3105, and an image receiving portion 3106. Theactive matrix display device of the present invention may be used in thedisplay portion 3102.

[0406]FIG. 28C shows a mobile computer that is composed of a main body3201, a camera portion 3202, an image receiving portion 3203, anoperating switch 3204 and a display portion 3205. The active matrixdisplay device of the present invention may be used in the displayportion 3205.

[0407]FIG. 28D shows a goggle type display that is composed of a mainbody 3301, display portions 3302 and arm portions 3303. The activematrix display device of the present invention may be used as thedisplay portions 3302.

[0408]FIG. 28E shows a rear projector (projection TV) which is composedof a main body 3401, a light source 3402, a liquid crystal displaydevice 3403, a polarized light beam splitter 3404, reflectors 3405,3406, and a screen 3407. The present invention may be applied to theliquid crystal display device 3403.

[0409]FIG. 28F shows a front projector which is composed of a main body3501, a light source 3502, a liquid crystal display device 3503, anoptical system 3504 and a screen 3505. The present invention may beapplied to the liquid crystal display device 3503.

[0410] As described above, the application range of the presentinvention is extremely wide, and may be applied to electric equipmentsin all fields.

[0411] A semiconductor device can be made thinner, lighter weight, andbe imparted with flexibility with the present invention. In general, theprocess of manufacturing a semiconductor device is complex if asubstrate is made thinner, but the semiconductor device can be easilymanufactured by using a suitable supporting material only duringmanufacture in the present invention. It is possible to apply thepresent invention to semiconductor devices in which circuits such as SOIstructure integrated circuits, active matrix liquid crystal displaydevices, and active matrix EL display devices are formed on aninsulator. Further, insulation films between wirings can be made thickerby using the present invention, and parasitic capacitance generatingbetween wirings formed on different layers can be reduced. In addition,the problem of making conductive connections by forming an openingportion in an insulation film, and the problem of wiring material heatresistance when insulation films are formed thicker with a conventionalstructure are solved.

What is claimed is:
 1. A method of manufacturing a semiconductor devicecomprising the steps of: forming a thin film device on a firstsubstrate; bonding a second substrate to the thin film device formed onthe first substrate; removing the first substrate, leaving the thin filmdevice on the second substrate; forming an opening portion for reachingthe thin film device retained on the second substrate; forming at lestone conductive layer contacting the thin film device through the openingportion; and cutting the second substrate so that a bonding portionbetween the thin film device and the second substrate is removed, andremoving the second substrate.
 2. A method of manufacturing asemiconductor device according to claim 1, wherein the regions in whichthe thin film device is formed and regions in which the thin film deviceis not formed are coated by using at least two types of adhesivesseparately, and the second substrate is bonded to the surface of thefirst substrate on which the thin film device is formed.
 3. A method ofmanufacturing a semiconductor device comprising the steps of: forming afirst thin film device on one surface of a first substrate; bonding athin film bonded to the second substrate or a second thin film device toa second substrate; bonding the thin film or the second thin film devicebonded to the second substrate to the first thin film device formed onthe first substrate; removing the first substrate, leaving the firstthin film device on the second substrate; forming an opening portion inthe first thin film device retained on the second substrate; and cuttingthe second substrate so that the a bonding portion between the thin filmor the second thin film device and the second substrate is removed, andremoving only the second substrate, leaving the thin film or the secondthin film device.
 4. A method of manufacturing a semiconductor deviceaccording to claim 3, wherein at least one conductive layer is formed onthe first thin film device retained on the second substrate.
 5. A methodof manufacturing a semiconductor device according to claim 3, whereinlocations in which the first thin film device exists and locations inwhich the first thin film device does not exist are coated separately byusing at least two types of adhesives, and the thin film or the secondthin film device is bonded to the second substrate.
 6. A method ofmanufacturing a semiconductor device comprising the steps of: forming afirst thin film device on one surface of a first substrate; bonding athin film or a second thin film device to a second substrate; bondingthe thin film bonded to the second substrate or the second thin filmdevice bonded to the second substrate to the first thin film deviceformed on the first substrate; and cutting the second substrate so thatthe a bonding portion between the thin film or the second thin filmdevice and the second substrate is removed, and removing only the secondsubstrate, leaving the thin film or the second thin film device.
 7. Amethod of manufacturing a semiconductor device according to claim 6,wherein locations in which the first thin film device exists andlocations in which the first thin film device does not exist are coatedby using at least two types of adhesives separately, and the thin filmor the second thin film device is bonded to the second substrate.
 8. Amethod of manufacturing a semiconductor device according to claim 6,wherein the second substrate is bonded to a polarization film or apolarization plate.
 9. A method of manufacturing an active matrix liquidcrystal display device comprising the steps of: forming a first thinfilm device on one surface of a first substrate; bonding a thin film ora second thin film device to a second substrate; introducing liquidcrystals between the first thin film device formed on the firstsubstrate and the thin film bonded to the second substrate or the secondthin film device bonded to the second substrate; and cutting the firstsubstrate, the first thin film device, the second substrate, and thethin film or the second thin film device so that a portion of the firstsubstrate, the first thin film device, the second substrate, and thethin film or the second thin film device is removed, and removing thesecond substrate, leaving the thin film or the second thin film device.10. A method of manufacturing a semiconductor device according to claim9, wherein locations in which the first thin film device exists andlocations in which the first thin film device does not exist are coatedby using at least two types of adhesives separately, and the thin filmor the second thin film device is bonded to the second substrate.
 11. Amethod of manufacturing a semiconductor device according to claim 9,wherein the second substrate is bonded to a polarization film or apolarization plate.
 12. A method of manufacturing a semiconductor devicecomprising the steps of: forming a thin film device on one surface of afirst substrate; forming an electrode on the thin film device; bondingthe thin film device formed on the first substrate to a secondsubstrate; removing the first substrate, leaving the thin film device onthe second substrate; forming an opening portion in the thin film deviceretained on the second substrate; cutting the second substrate so thatthe a bonding portion between the thin film device and the secondsubstrate is removed, and removing the second substrate; and overlappinga plurality of thin film devices obtained by repeating all the precedingsteps, and making the electrodes formed on the top and the bottom of thethin film devices conductive.
 13. A method of manufacturing asemiconductor device according to claim 12, wherein the regions in whichthe thin film device is formed and regions in which the thin film deviceis not formed are coated by using at least two types of adhesivesseparately, and a second substrate is bonded to the surface of the firstsubstrate on which the thin film device is formed.
 14. A method ofmanufacturing a semiconductor device according to claim 12, wherein atleast one conductive layer is formed in the opening portion to supply anelectrode.
 15. A method of manufacturing a semiconductor devicecomprising the steps of: forming a first thin film device on one surfaceof a first substrate; forming an electrode on the first thin filmdevice; bonding a thin film or a second thin film device to a secondsubstrate; forming an opening portion in the thin film or the secondthin film device; bonding the thin film bonded to the second substrateor the second thin film device bonded to the second substrate to thefirst thin film device formed on the first substrate; removing the firstsubstrate, leaving the first thin film device on the second substrate;forming an opening portion in the first thin film device retained on thesecond substrate; cutting the second substrate so that the a bondingportion between the thin film or the second thin film device and thesecond substrate is removed, removing only the second substrate, leavingthe thin film or the second thin film device; and overlapping aplurality of thin film devices obtained by repeating all the precedingsteps, and making the electrodes formed on the top and bottom of thethin film devices conductive.
 16. A method of manufacturing asemiconductor device according to claim 15, wherein the regions in whichthe first thin film device is formed and regions in which the first thinfilm device is not formed are coated by using at least two types ofadhesives separately, and the second substrate is bonded to the surfaceof the first substrate on which the thin film device is formed.
 17. Amethod of manufacturing a semiconductor device according to claim 15,wherein at least one conductive layer is formed in the opening portionto supply an electrode.
 18. A method of manufacturing a semiconductordevice comprising the steps of: forming a thin film device on a firstsubstrate; bonding a second substrate to the thin film device formed onthe first substrate; removing the first substrate; and forming anopening portion in the thin film device retained on the secondsubstrate.
 19. A method of manufacturing a semiconductor deviceaccording to claim 18, wherein at least one conductive layer is formedin the thin film device retained on the second substrate.
 20. Asemiconductor device using a semiconductor formed on an insulator as anactive layer, wherein at least one conductive layer is formed above andbelow the active layer a material having a resistance to heat equal toor less than 550° C.
 21. A thin film transistor using a semiconductorformed on an insulator as an active layer, wherein a gate insulatingfilm is formed on the active layer; a gate electrode is formed on thegate insulating film; a impurity is added using the gate electrode as amask; and a wiring is formed on the side opposite the gate electrodewith respect to the active layer using a material having a resistance toheat equal to or less than 550° C.
 22. A semiconductor devicecomprising: a pair of polarization films; a pixel electrode; a thin filmtransistor comprising an active layer; a gate insulating film contactedwith the active layer; and a gate electrode contacted with the gateinsulating film; a wiring connected to the active layer from the gateelectrode side; an opposing electrode; liquid crystals between the pixelelectrode formed between the pair of polarization films and the opposingelectrode; a sealant; and an orientation film.
 23. A semiconductordevice according to claim 22, wherein: a third insulating film contactedwith the gate electrode; a passivation film contacted with the thirdinsulating film; a wiring electrically connected to each thin filmtransistors through an opening portion formed in the third insulatingfilm and in the gate insulating film.
 24. A method of manufacturing asemiconductor device according to claim 1, wherein the semiconductordevice is an active matrix liquid crystal display device.
 25. A methodof manufacturing a semiconductor device according to claim 3, whereinthe semiconductor device is an active matrix liquid crystal displaydevice.
 26. A method of manufacturing a semiconductor device accordingto claim 6, wherein the semiconductor device is an active matrix liquidcrystal display device.
 27. A method of manufacturing a semiconductordevice according to claim 1, wherein the semiconductor device is anactive matrix EL display device.
 28. A method of manufacturing asemiconductor device according to claim 3, wherein the semiconductordevice is an active matrix EL display device.
 29. A method ofmanufacturing a semiconductor device according to claim 6, wherein thesemiconductor device is an active matrix EL display device.
 30. Asemiconductor device using the method of manufacturing a semiconductordevice according to
 1. 31. A semiconductor device using the method ofmanufacturing a semiconductor device according to
 3. 32. A semiconductordevice using the method of manufacturing a semiconductor deviceaccording to
 6. 33. A method of manufacturing a semiconductor deviceaccording to claim 1, wherein an active matrix liquid crystal displaydevice is manufactured by performing the steps before the step ofremoving the second substrate: bonding a second thin film or a thirdthin film device to a third substrate; introducing liquid crystalsbetween the first thin film device bonded to the second substrate andthe second thin film bonded to the third substrate or the third thinfilm device bonded to the third substrate; cutting the second substrateand the third substrate so that a portion of the second substrate andthe third substrate is removed, and removing the second substrate,leaving the thin film or the second thin film device; and removing thethird substrate, leaving the second thin film or the third thin filmdevice.
 34. A method of manufacturing a semiconductor device accordingto claim 3, wherein an active matrix liquid crystal display device ismanufactured by performing the steps before the step of removing thesecond substrate: bonding a second thin film or a third thin film deviceto a third substrate; introducing liquid crystals between the first thinfilm device bonded to the second substrate and the second thin filmbonded to the third substrate or the third thin film device bonded tothe third substrate; cutting the second substrate and the thirdsubstrate so that a portion of the second substrate and the thirdsubstrate is removed, and removing the second substrate, leaving thethin film or the second thin film device; and removing the thirdsubstrate, leaving the second thin film or the third thin film device.35. A method of manufacturing a semiconductor device according to claim1, wherein an active matrix liquid crystal display device ismanufactured by performing the steps before the step of removing thesecond substrate: coating locations in which the thin film/the firstthin film device exists, and locations in which the thin film/the firstthin film device does not exist, separately by using at least two typesof adhesives, and bonding a second thin film or a third thin film deviceto a third substrate; introducing liquid crystals between the first thinfilm device bonded to the second substrate and the second thin film, orthe third thin film device, bonded to the third substrate; cutting thesecond substrate and the third substrate so that a portion of the secondsubstrate and the third substrate is removed, and removing the secondsubstrate, leaving the thin film or the second thin film device; andremoving the third substrate, leaving the second thin film or the thirdthin film device.
 36. A method of manufacturing a semiconductor deviceaccording to claim 3, wherein an active matrix liquid crystal displaydevice is manufactured by performing the steps before the step ofremoving the second substrate: coating locations in which the thinfilm/the first thin film device exists, and locations in which the thinfilm/the first thin film device does not exist, separately by using atleast two types of adhesives, and bonding a second thin film or a thirdthin film device to a third substrate; introducing liquid crystalsbetween the first thin film device bonded to the second substrate andthe second thin film, or the third thin film device, bonded to the thirdsubstrate; cutting the second substrate and the third substrate so thata portion of the second substrate and the third substrate is removed,and removing the second substrate, leaving the thin film or the secondthin film device; and removing the third substrate, leaving the secondthin film or the third thin film device.
 37. A method of manufacturingan active matrix liquid crystal display device according to any one ofclaim 1, wherein: portions of the first substrate remain and are used asspacers of the liquid crystal display device in the step of removing thefirst substrate.
 38. A method of manufacturing an active matrix liquidcrystal display device according to any one of claim 3, wherein:portions of the first substrate remain and are used as spacers of theliquid crystal display device in the step of removing the firstsubstrate.
 39. A method of manufacturing an active matrix liquid crystaldisplay device according to any one of claim 6, wherein: portions of thefirst substrate remain and are used as spacers of the liquid crystaldisplay device in the step of removing the first substrate.
 40. Anactive matrix liquid crystal display device is manufactured using themethod of manufacture according to claim
 1. 41. An active matrix liquidcrystal display device is manufactured using the method of manufactureaccording to claim
 3. 42. An active matrix liquid crystal display deviceis manufactured using the method of manufacture according to claim 6.43. An active matrix EL display device is manufactured using the methodof manufacture according to claim
 1. 44. An active matrix EL displaydevice is manufactured using the method of manufacture according toclaim
 3. 45. An active matrix EL display device is manufactured usingthe method of manufacture according to claim
 6. 46. A semiconductordevice is manufactured using the method of manufacturing thesemiconductor device according to claim
 12. 47. A semiconductor deviceis manufactured using the method of manufacturing the semiconductordevice according to claim
 15. 48. A method of manufacturing asemiconductor device according to claim 18, wherein the semiconductordevice is a self light emitting display device.
 49. A method ofmanufacturing a semiconductor device according to claim 18, wherein thesemiconductor device is a transmission type display device.
 50. A methodof manufacturing a semiconductor device according to claim 18, whereinthe semiconductor device is a reflection type display device.
 51. Amethod of manufacturing a semiconductor device according to claim 18,wherein the semiconductor device is an active matrix liquid crystaldisplay device.
 52. A method of manufacturing a semiconductor deviceaccording to claim 18, wherein the semiconductor device is an activematrix EL display device.
 53. A method of forming a semiconductor deviceaccording to claim 18, wherein the semiconductor device is an integratedcircuit using SOI (silicon on insulator) structure elements.
 54. Anintegrated circuit having the thin film transistor according to claim21.
 55. A semiconductor device according to claim 23, wherein the activelayer is formed in a layer between the pixel electrode and the gateelectrode.